IXTX8N150L

Specifications

Input Capacitance Ciss Max Vds

8000pF @ 25V

Terminal Pozisyonu

SINGLE

Vgsth Max Id

8V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Transistor Element Material

SILICON

Continuous Drain Current Id

8A

Montaj

Through Hole

Case Connection

DRAIN

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Currentmax Idm

20A

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Drive Voltage Max Rds On Min Rds On

20V

Additional Feature

UL RECOGNIZED

Vgs Max

±30V

Montaj Tipi

Through Hole

Rds On Max Id Vgs

3.6 Ω @ 4A, 20V

Number Of Elements

1

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2009

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

250nC @ 15V

Power Dissipation

700W

Pin Sayısı

3

Current Continuous Drain Id25

8A Tc

Drain To Source Voltage Vdss

1500V

Fet Type

N-Channel

Power Dissipation Max

700W Tc

Kurşunsuz Kodu

yes

Ambalaj

Tube

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e1

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-247-3