IXTX46N50L

Specifications

Transistor Element Material

SILICON

Typical Turnon Delay Time Ns

40

Continuous Drain Current Id

46A

Case Connection

DRAIN

Maximum Gate Source Voltage V

±30

Mounting

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

7000pF @ 25V

Package Width

5.21(Max)

Pcb Changed

3

Typical Gate Charge Vgs Nc

260@15V

Number Of Elements Per Chip

1

Tab

Tab

Maximum Drain Source Voltage V

500

Typical Input Capacitance Vds Pf

7000@25V

Automotive

No

Channel Mode

Enhancement

Rds On Max Id Vgs

160m Ω @ 500mA, 20V

Number Of Elements

1

Turn Off Delay Time

80 ns

Ppap

No

Additional Feature

AVALANCHE RATED

Vgs Max

±30V

Package Length

16.13(Max)

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Power Dissipation

700W

Channel Type

N

Svhc

Yes

Typical Turnoff Delay Time Ns

80

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Maximum Power Dissipation Mw

700000

Transistor Application

SWITCHING

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Maximum Continuous Drain Current A

46

Kurşunsuz Kodu

yes