IXTU01N100

Specifications

Typical Input Capacitance Vds Pf

54@25V

Terminal Sayısı

3

Channel Type

N

Channel Mode

Enhancement

Material

Si

Vgsth Max Id

4.5V @ 25μA

Drain Currentmax Abs Id

0.1A

Maximum Power Dissipation Mw

25000

Supplier Package

TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Gate Charge Qg Max Vgs

6.9nC @ 10V

Maximum Operating Temperature C

150

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

28 ns

Rds On Max Id Vgs

80 Ω @ 100mA, 10V

Yayın Yılı

2001

Eu Rohs

Compliant

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Pin Sayısı

3

Mounting

Through Hole

Typical Gate Charge10v Nc

6.9

Number Of Elements Per Chip

1

HTS Kodu

8541.29.00.95

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

100mA Tc

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Vgs Max

±20V

Maximum Drain Source Voltage V

1000

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

80000@10V

Typical Gate Charge Vgs Nc

6.9@10V

Qualification Status

Not Qualified