IXTT30N60L2

Specifications

Mounting

Surface Mount

Pin Sayısı

4

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2009

Threshold Voltage

2.5V

Jesd30 Code

R-PSSO-G2

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant

Maximum Drain Source Voltage V

600

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Typical Fall Time Ns

43

Typical Gate Charge Vgs Nc

335@10V

Maximum Drain Source Resistance Mohm

240@10V

Svhc Exceeds Threshold

Yes

Case Connection

DRAIN

Radyasyon Dayanımı

No

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

335

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current Continuous Drain Id25

30A Tc

Montaj

Surface Mount

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

540000

Maximum Gate Threshold Voltage V

4.5

Supplier Package

TO-268

Terminal Sayısı

2

Typical Input Capacitance Vds Pf

10700@25V

Vgsth Max Id

4.5V @ 250μA

Maximum Gate Source Leakage Current Na

100

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Linear L2™

Channel Type

N

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Drainsource On Resistancemax

0.24Ohm

Reach Svhc

No SVHC