IXTT170N10P

Specifications

Mounting

Surface Mount

Pin Sayısı

4

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Gate To Source Voltage Vgs

20V

Yayın Yılı

2010

Eu Rohs

Compliant with Exemption

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

198@10V

Maximum Drain Source Resistance Mohm

9@10V

Typical Fall Time Ns

33

Case Connection

DRAIN

Svhc Exceeds Threshold

Yes

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

100

Vgs Max

±20V

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Current Continuous Drain Id25

170A Tc

Montaj

Surface Mount

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

198

Supplier Package

TO-268

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

715000

Vgsth Max Id

5V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Polar™

Terminal Sayısı

2

Typical Input Capacitance Vds Pf

6000@25V

Fall Time Typ

33 ns

Rds On Max Id Vgs

9m Ω @ 500mA, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

175

Drainsource On Resistancemax

0.009Ohm

Process Technology

Polar