IXTT16N10D2

Specifications

Tab

Tab

Typical Turnon Delay Time Ns

45

Maximum Gate Source Voltage V

±20

Ppap

No

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Typical Rise Time Ns

43

Power Dissipation

830W

Pcb Changed

2

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Typical Turnoff Delay Time Ns

340

Drain To Source Voltage Vdss

100V

Minimum Operating Temperature C

-55

Power Dissipation Max

830W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

16(Min)

Hts

8541.29.00.95

Automotive

No

Fet Type

N-Channel

Eccn Us

EAR99

Continuous Drain Current Id

16A

REACH Uyumluluk Kodu

not_compliant

Terminal Formu

GULL WING

Parça Durumu

Active

Package Width

14(Max)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Package Height

5.1(Max)

Package Length

16.05(Max)

Input Capacitance Ciss Max Vds

5700pF @ 25V

Svhc

Yes

Ambalaj

Tube

Montaj Tipi

Surface Mount

Yayın Yılı

2012

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant