IXTT120N15P

Specifications

Maximum Power Dissipation Mw

600000

Additional Feature

AVALANCHE RATED

Supplier Package

TO-268

Rad Hardened

No

Typical Input Capacitance Vds Pf

4900@25V

Terminal Sayısı

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHT™

Channel Type

N

Channel Mode

Enhancement

Vgsth Max Id

5V @ 250μA

Gate Charge Qg Max Vgs

150nC @ 10V

Maximum Operating Temperature C

175

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

9 Weeks

Rds On Max Id Vgs

16m Ω @ 500mA, 10V

Fall Time Typ

26 ns

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Polarity

N

Pin Sayısı

4

Mounting

Surface Mount

Yayın Yılı

2006

Eu Rohs

Compliant with Exemption

Gate To Source Voltage Vgs

20V

Element Configuration

Single

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Tip

Power MOSFET

Drainsource Onvolt

150(V)

Maximum Drain Source Voltage V

150

Çalışma Sıcaklığı

-55°C~175°C TJ

Svhc Exceeds Threshold

Yes

Case Connection

DRAIN

Typical Fall Time Ns

26

Typical Gate Charge Vgs Nc

150@10V

Maximum Drain Source Resistance Mohm

16@10V

Typical Gate Charge10v Nc

150