IXTT02N450HV

Specifications

Configuration

Single

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

113W

Rds On Drainsource Resistance

625 Ohms

Pcb Changed

2

Transistor Application

SWITCHING

Typical Rise Time Ns

48

Ppap

No

Montaj Stili

SMD/SMT

Number Of Elements

1

Maximum Gate Source Voltage V

±20

Drain To Source Breakdown Voltage

4.5kV

Typical Turnon Delay Time Ns

17

Minimum Operating Temperature

- 55 C

Turn Off Delay Time

28 ns

Tab

Tab

Ambalaj

Tube

Rise Time

48ns

Montaj Tipi

Surface Mount

Svhc

Yes

Input Capacitance Ciss Max Vds

256pF @ 25V

Transistor Element Material

SILICON

Package Width

14(Max)

Parça Durumu

Active

Package Height

5.1(Max)

Package Length

16.05(Max)

Continuous Drain Current Id

200mA

REACH Uyumluluk Kodu

not_compliant

Transistor Polarity

N-Channel

Terminal Formu

GULL WING

Fet Type

N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Maximum Idss Ua

10

Power Dissipation Max

113W Tc

JESD-609 Kodu

e3

Maximum Continuous Drain Current A

0.2

Pulsed Drain Currentmax Idm

0.6A

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4 V