IXTQ82N25P

Specifications

Automotive

No

Fet Type

N-Channel

Maximum Continuous Drain Current A

82

JESD-609 Kodu

e3

Power Dissipation Max

500W Tc

Kurşunsuz Kodu

yes

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

200A

Typical Turnoff Delay Time Ns

78

Montaj Tipi

Through Hole

Rise Time

20ns

Ambalaj

Tube

Input Capacitance Ciss Max Vds

4800pF @ 25V

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Continuous Drain Current Id

82A

Number Of Elements

1

Ppap

No

Lead Shape

Through Hole

Avalanche Energy Rating Eas

1000 mJ

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

29

Drain To Source Breakdown Voltage

250V

Tab

Tab

Turn Off Delay Time

78 ns

Terminal Kaplaması

Matte Tin (Sn)

Configuration

Single

Pcb Changed

3

Power Dissipation

500W

Typical Rise Time Ns

20

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Supplier Package

TO-3P

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

500000

Standard Package Name

TO-3P

Vgsth Max Id

5V @ 250μA