IXTQ75N10P

Specifications

Additional Feature

AVALANCHE RATED

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

360000

Supplier Package

TO-3P

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

2250@25V

Vgsth Max Id

5.5V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHT™

Drainsource On Resistancemax

0.025Ohm

Maximum Operating Temperature C

175

Process Technology

PolarHT

Gate Charge Qg Max Vgs

74nC @ 10V

Fall Time Typ

45 ns

Rds On Max Id Vgs

25m Ω @ 500mA, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Mounting

Through Hole

Pin Sayısı

3

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2006

Eu Rohs

Compliant with Exemption

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

74@10V

Maximum Drain Source Resistance Mohm

25@10V

Typical Fall Time Ns

45

Case Connection

DRAIN

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

74

Kılıf / Paket

TO-3P-3, SC-65-3