IXTQ69N30P

Specifications

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHT™

Pulsed Drain Currentmax Idm

200A

Additional Feature

AVALANCHE RATED

Power Dissipation Max

500W Tc

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Kurşunsuz

Lead Free

Continuous Drain Current Id

69A

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drainsource On Resistancemax

0.049Ohm

Input Capacitance Ciss Max Vds

4960pF @ 25V

Gate Charge Qg Max Vgs

180nC @ 10V

Rds On Max Id Vgs

49m Ω @ 500mA, 10V

Montaj Tipi

Through Hole

Fall Time Typ

27 ns

Fabrika Tedarik Süresi

24 Weeks

Rise Time

25ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

75 ns

Yayın Yılı

2006

Element Configuration

Single

Drain To Source Breakdown Voltage

300V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

1500 mJ

Number Of Elements

1

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

69A Tc

Montaj

Through Hole

ECCN Kodu

EAR99