IXTQ60N20T

Specifications

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

150A

Drain Currentmax Abs Id

60A

Drain To Source Voltage Vdss

200V

Vgsth Max Id

5V @ 250μA

Power Dissipation Max

500W Ta

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Gate Charge Qg Max Vgs

73nC @ 10V

Input Capacitance Ciss Max Vds

4530pF @ 25V

Drainsource On Resistancemax

0.04Ohm

Fabrika Tedarik Süresi

26 Weeks

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Rds On Max Id Vgs

40m Ω @ 30A, 10V

RoHS Durumu

Non-RoHS Compliant

Jesd30 Code

R-PSFM-T3

Avalanche Energy Rating Eas

700 mJ

Pin Sayısı

3

Number Of Elements

1

Ds Breakdown Voltagemin

200V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

60A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Qualification Status

Not Qualified