IXTQ50N20P

Specifications

Channel Mode

Enhancement

Channel Type

N

Seri

PolarHT™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 250μA

Typical Input Capacitance Vds Pf

2720@25V

Terminal Sayısı

3

Supplier Package

TO-3P

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

360000

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Fall Time Typ

30 ns

Rds On Max Id Vgs

60m Ω @ 50A, 10V

Gate Charge Qg Max Vgs

70nC @ 10V

Drainsource On Resistancemax

0.06Ohm

Maximum Operating Temperature C

175

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Pin Sayısı

3

Mounting

Through Hole

Montaj

Through Hole

ECCN Kodu

EAR99

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

50A Tc

Typical Gate Charge10v Nc

70

Number Of Elements Per Chip

1

Case Connection

DRAIN

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

70@10V

Maximum Drain Source Resistance Mohm

60@10V

Typical Fall Time Ns

30