IXTQ480P2

Specifications

Montaj Stili

Through Hole

Number Of Elements

1

Ppap

No

Operating Temperature Classification

Military

Maximum Gate Source Voltage V

±30

Gatesource Voltage Max

±30(V)

Avalanche Energy Rating Eas

1500 mJ

Typical Turnon Delay Time Ns

22

Continuous Drain Current

52(A)

Drain To Source Breakdown Voltage

500V

Tab

Tab

Minimum Operating Temperature

- 55 C

Terminal Kaplaması

Pure Tin (Sn)

Configuration

Single

Rds On Drainsource Resistance

120 mOhms

Pcb Changed

3

Power Dissipation

960W

Typical Rise Time Ns

11

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Hts

8541.29.00.95

Maximum Continuous Drain Current A

52

Kurşunsuz Kodu

yes

Power Dissipation Max

960W Tc

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

150A

Typical Turnoff Delay Time Ns

40

Montaj Tipi

Through Hole

Ambalaj

Tube

Package Type

TO-3P

Input Capacitance Ciss Max Vds

6800pF @ 25V

Package Length

15.8(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Width

4.9(Max)

Parça Durumu

Active

Transistor Polarity

N-Channel