IXTQ460P2

Specifications

Terminal Kaplaması

Pure Tin (Sn)

Configuration

Single

Pcb Changed

3

Power Dissipation

480W

Typical Rise Time Ns

9

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Ppap

No

Avalanche Energy Rating Eas

750 mJ

Maximum Gate Source Voltage V

±30

Drain To Source Breakdown Voltage

500V

Tab

Tab

Montaj Tipi

Through Hole

Ambalaj

Tube

Input Capacitance Ciss Max Vds

2890pF @ 25V

Package Length

15.8(Max)

Package Width

4.9(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Eccn Us

EAR99

Continuous Drain Current Id

24A

Automotive

No

Fet Type

N-Channel

Maximum Continuous Drain Current A

24

Power Dissipation Max

480W Tc

Kurşunsuz Kodu

yes

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

50A

Typical Fall Time Ns

5

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

48@10V

Maximum Drain Source Resistance Mohm

270@10V

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

500

Vgs Max

±30V

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

24A Tc