IXTQ42N25P

Specifications

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Fall Time Typ

30 ns

Rds On Max Id Vgs

84m Ω @ 500mA, 10V

Process Technology

PolarHT

Gate Charge Qg Max Vgs

70nC @ 10V

Maximum Operating Temperature C

150

Drainsource On Resistancemax

0.084Ohm

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Supplier Package

TO-3P

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

300000

Additional Feature

AVALANCHE RATED

Channel Mode

Enhancement

Channel Type

N

Seri

PolarHT™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5.5V @ 250μA

Typical Input Capacitance Vds Pf

2300@25V

Terminal Sayısı

3

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

84@10V

Typical Gate Charge Vgs Nc

70@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

30

Vgs Max

±20V

Maximum Drain Source Voltage V

250

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

42A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Typical Gate Charge10v Nc

70

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Through Hole

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single