IXTQ22N60P

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Fall Time Typ

23 ns

Rds On Max Id Vgs

350m Ω @ 11A, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

62nC @ 10V

Vgsth Max Id

5.5V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHV™

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

3600@25V

Supplier Package

TO-3P

Additional Feature

AVALANCHE RATED

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

400000

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

22A Tc

Montaj

Through Hole

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

62

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

62@10V

Maximum Drain Source Resistance Mohm

350@10V

Typical Fall Time Ns

23

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

600

Vgs Max

±30V

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Mounting

Through Hole