IXTQ200N10T

Specifications

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

5.5@10V

Typical Gate Charge Vgs Nc

152@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

34

Vgs Max

±30V

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Through Hole

ECCN Kodu

EAR99

Current Continuous Drain Id25

200A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Typical Gate Charge10v Nc

152

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Through Hole

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

8 Weeks

Fall Time Typ

34 ns

Rds On Max Id Vgs

5.5m Ω @ 50A, 10V

Gate Charge Qg Max Vgs

152nC @ 10V

Maximum Operating Temperature C

175

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Supplier Package

TO-3P

Standard Package Name

TO-3P

Maximum Power Dissipation Mw

550000

Additional Feature

AVALANCHE RATED

Channel Mode

Enhancement

Channel Type

N

Seri

TrenchMV™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4.5V @ 250μA

Typical Input Capacitance Vds Pf

9400@25V