IXTQ170N10P

Specifications

Mounting

Through Hole

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

100 V

Threshold Voltage

5V

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Typical Fall Time Ns

33

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

198@10V

Maximum Drain Source Resistance Mohm

9@10V

Case Connection

DRAIN

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

170A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Montaj

Through Hole

ECCN Kodu

EAR99

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

198

Id Continuous Drain Current

170 A

Supplier Package

TO-3P

Additional Feature

AVALANCHE RATED

Qg Gate Charge

198 nC

Maximum Power Dissipation Mw

715000

Standard Package Name

TO-3P

Vgsth Max Id

5V @ 250μA

Seri

Polar™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

6000@25V