IXTQ16N50P

Specifications

Tab

Tab

Turn Off Delay Time

70 ns

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

23

Drain To Source Breakdown Voltage

500V

Lead Shape

Through Hole

Avalanche Energy Rating Eas

750 mJ

Maximum Gate Source Voltage V

±30

Number Of Elements

1

Montaj Stili

Through Hole

Ppap

No

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Typical Rise Time Ns

25

Voltage Rated Dc

500V

Transistor Application

SWITCHING

Rds On Drainsource Resistance

400 mOhms

Pcb Changed

3

Power Dissipation

300W

Terminal Kaplaması

Matte Tin (Sn)

Configuration

Single

Typical Turnoff Delay Time Ns

70

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

16

JESD-609 Kodu

e3

Power Dissipation Max

300W Tc

Kurşunsuz Kodu

yes

Maks. Çalışma Sıcaklığı

+ 150 C

Automotive

No

Fet Type

N-Channel

Transistor Polarity

N-Channel

Continuous Drain Current Id

16A

Package Length

15.8(Max)

Parça Durumu

Active

Package Width

4.9(Max)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2250pF @ 25V

Akım Değeri

16A

Montaj Tipi

Through Hole