IXTQ150N15P

Specifications

Typical Turnon Delay Time Ns

30

Drain To Source Breakdown Voltage

150V

Tab

Tab

Minimum Operating Temperature

- 55 C

Turn Off Delay Time

100 ns

Montaj Stili

Through Hole

Number Of Elements

1

Ppap

No

Lead Shape

Through Hole

Maximum Gate Source Voltage V

±20

Avalanche Energy Rating Eas

2500 mJ

Typical Rise Time Ns

33

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Matte Tin (Sn)

Configuration

Single

Rds On Drainsource Resistance

13 mOhms

Pcb Changed

3

Power Dissipation

714W

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

5 V

Typical Turnoff Delay Time Ns

100

Fet Type

N-Channel

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Maximum Continuous Drain Current A

150

Kurşunsuz Kodu

yes

Power Dissipation Max

714W Tc

JESD-609 Kodu

e3

Package Length

15.8(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Width

4.9(Max)

Parça Durumu

Active

Transistor Polarity

N-Channel

Continuous Drain Current Id

150A

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

33ns

Input Capacitance Ciss Max Vds

5800pF @ 25V