IXTQ140N10P

Specifications

Mounting

Through Hole

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

100

Vgs Max

±20V

Typical Gate Charge Vgs Nc

155@10V

Maximum Drain Source Resistance Mohm

11@10V

Typical Fall Time Ns

26

Case Connection

DRAIN

Number Of Elements Per Chip

1

Radyasyon Dayanımı

No

Typical Gate Charge10v Nc

155

Kılıf / Paket

TO-3P-3, SC-65-3

Current Continuous Drain Id25

140A Tc

Montaj

Through Hole

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

600000

Standard Package Name

TO-3P

Supplier Package

TO-3P

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

4700@25V

Vgsth Max Id

5V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHT™

Maximum Operating Temperature C

175

Gate Charge Qg Max Vgs

155nC @ 10V

Fall Time Typ

26 ns

Rds On Max Id Vgs

11m Ω @ 70A, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE