IXTQ130N10T

Specifications

Maximum Operating Temperature C

175

Drainsource On Resistancemax

0.0091Ohm

Number Of Channels

1 Channel

Gate Charge Qg Max Vgs

104nC @ 10V

Pd Power Dissipation

360 W

Rds On Max Id Vgs

9.1m Ω @ 25A, 10V

Fall Time Typ

28 ns

Fabrika Tedarik Süresi

8 Weeks

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Additional Feature

AVALANCHE RATED, ULTRA LOW RESISTANCE

Maximum Power Dissipation Mw

360000

Standard Package Name

TO-3P

Supplier Package

TO-3P

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

5080@25V

Vgsth Max Id

4.5V @ 250μA

Seri

TrenchMV™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Typical Fall Time Ns

28

Maximum Drain Source Resistance Mohm

9.1@10V

Typical Gate Charge Vgs Nc

104@10V

Qualification Status

Not Qualified

Case Connection

DRAIN

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

104

Id Continuous Drain Current

130 A

Current Continuous Drain Id25

130A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

ECCN Kodu

EAR99

Montaj

Through Hole

Vds Drainsource Breakdown Voltage

100 V

Mounting

Through Hole

Pin Sayısı

3