IXTQ100N25P

Specifications

Typical Gate Charge10v Nc

185

Number Of Elements Per Chip

1

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

100A Tc

Kılıf / Paket

TO-3P-3, SC-65-3

Vgs Max

±20V

Maximum Drain Source Voltage V

250

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Typical Fall Time Ns

28

Maximum Drain Source Resistance Mohm

27@10V

Typical Gate Charge Vgs Nc

185@10V

Qualification Status

Not Qualified

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Threshold Voltage

5V

Pin Sayısı

3

Mounting

Through Hole

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Process Technology

PolarHT

Gate Charge Qg Max Vgs

185nC @ 10V

Maximum Operating Temperature C

150

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

24m Ω @ 50A, 10V

Fall Time Typ

28 ns

Typical Input Capacitance Vds Pf

6300@25V

Terminal Sayısı

3

Seri

PolarHT™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Channel Mode

Enhancement

Channel Type

N