IXTP90N055T2

Specifications

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Jesd30 Code

R-PSFM-T3

Eu Rohs

Compliant

Yayın Yılı

2012

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Mounting

Through Hole

Montaj

Through Hole

ECCN Kodu

EAR99

Current Continuous Drain Id25

90A Tc

Kılıf / Paket

TO-220-3

Typical Gate Charge10v Nc

42

Number Of Elements Per Chip

1

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

8.4@10V

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

42@10V

Typical Fall Time Ns

19

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

55

Channel Mode

Enhancement

Channel Type

N

Seri

TrenchT2™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Typical Input Capacitance Vds Pf

2770@25V

Terminal Sayısı

3

Supplier Package

TO-220

Maximum Power Dissipation Mw

150000

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Fall Time Typ

19 ns

Rds On Max Id Vgs

8.4m Ω @ 25A, 10V

Gate Charge Qg Max Vgs

42nC @ 10V

Process Technology

TrenchT2