IXTP86N20T

Specifications

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

86A Tc

Vgs Gatesource Voltage

- 30 V, + 30 V

ECCN Kodu

EAR99

Montaj

Through Hole

Number Of Elements Per Chip

1

Id Continuous Drain Current

86 A

Typical Gate Charge10v Nc

90

Maximum Drain Source Resistance Mohm

33@10V

Typical Gate Charge Vgs Nc

90@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

29

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

200

Vgs Max

±30V

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Mounting

Through Hole

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

200 V

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

29m Ω @ 500mA, 10V

Pd Power Dissipation

480 W

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

26 Weeks

Drainsource On Resistancemax

0.029Ohm

Maximum Operating Temperature C

175

Gate Charge Qg Max Vgs

90nC @ 10V

Number Of Channels

1 Channel

Vgsth Max Id

5V @ 1mA

Technology

Si

Channel Mode

Enhancement

Channel Type

N

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3