IXTP80N10T

Specifications

Maximum Operating Temperature C

175

Drainsource On Resistancemax

0.014Ohm

Gate Charge Qg Max Vgs

60nC @ 10V

Rds On Max Id Vgs

14m Ω @ 25A, 10V

Fall Time Typ

48 ns

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

230000

Supplier Package

TO-220

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

3040@25V

Vgsth Max Id

5V @ 100μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

TrenchMV™

Channel Mode

Enhancement

Channel Type

N

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

100

Vgs Max

±20V

Typical Fall Time Ns

48

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

60@10V

Maximum Drain Source Resistance Mohm

14@10V

Case Connection

DRAIN

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

60

Current Continuous Drain Id25

80A Tc

Kılıf / Paket

TO-220-3

ECCN Kodu

EAR99

Montaj

Through Hole

Mounting

Through Hole

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2009

Eu Rohs

Compliant with Exemption

Jesd30 Code

R-PSFM-T3

Element Configuration

Single