IXTP75N10P

Specifications

Turn On Delay Time

27 ns

Pcb Changed

3

Power Dissipation

360W

Terminal Kaplaması

Matte Tin (Sn)

Configuration

Single

Typical Rise Time Ns

53

Transistor Application

SWITCHING

Operating Temperature Classification

Military

Maximum Gate Source Voltage V

±20

Gatesource Voltage Max

±20(V)

Number Of Elements

1

Ppap

No

Tab

Tab

Turn Off Delay Time

66 ns

Continuous Drain Current

75(A)

Typical Turnon Delay Time Ns

27

Drain To Source Breakdown Voltage

100V

Package Type

TO-220

Input Capacitance Ciss Max Vds

2250pF @ 25V

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

53ns

Operating Temp Range

-55C to 175C

Continuous Drain Current Id

75A

Eccn Us

EAR99

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Package Length

10.66(Max)

Transistor Element Material

SILICON

Package Width

4.83(Max)

Parça Durumu

Active

Hts

8541.29.00.95

Maximum Continuous Drain Current A

75

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Power Dissipation Max

360W Tc

Fet Type

N-Channel

Automotive

No

Direnç

25MOhm

Typical Turnoff Delay Time Ns

66