IXTP60N20T

Specifications

Fet Type

N-Channel

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

No

Maximum Idss Ua

1

Power Dissipation Max

500W Tc

Hts

8541.29.00.95

Maximum Continuous Drain Current A

60

Pulsed Drain Currentmax Idm

150A

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

3 V

Typical Turnoff Delay Time Ns

33

Ambalaj

Tube

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

4530pF @ 25V

Transistor Element Material

SILICON

Package Width

4.83(Max)

Parça Durumu

Active

Package Length

10.66(Max)

Jedec95 Code

TO-220AB

Package Height

9.15(Max)

REACH Uyumluluk Kodu

unknown

Continuous Drain Current Id

60A

Eccn Us

EAR99

Transistor Polarity

N-Channel

Ppap

No

Number Of Elements

1

Montaj Stili

Through Hole

Maximum Gate Source Voltage V

±20

Avalanche Energy Rating Eas

700 mJ

Drain To Source Breakdown Voltage

200V

Typical Turnon Delay Time Ns

22

Minimum Operating Temperature

- 55 C

Tab

Tab

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

500W

Pcb Changed

3

Rds On Drainsource Resistance

40 mOhms

Transistor Application

SWITCHING

Typical Rise Time Ns

13

Supplier Package

TO-220AB