IXTP52P10P

Specifications

Channel Type

P

Channel Mode

Enhancement

Technology

Si

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarP™

Vgsth Max Id

4.5V @ 250μA

Typical Input Capacitance Vds Pf

2845@25V

Terminal Sayısı

3

Supplier Package

TO-220

Maximum Power Dissipation Mw

300000

Qg Gate Charge

60 nC

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

22 ns

Pd Power Dissipation

300 W

Rds On Max Id Vgs

50m Ω @ 500mA, 10V

Gate Charge Qg Max Vgs

60nC @ 10V

Number Of Channels

1 Channel

Maximum Operating Temperature C

150

Drainsource On Resistancemax

0.05Ohm

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Jesd30 Code

R-PSFM-T3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

100 V

Vgs Gatesource Voltage

- 20 V, + 20 V

ECCN Kodu

EAR99

Montaj

Through Hole

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

52A Tc

Id Continuous Drain Current

52 A

Typical Gate Charge10v Nc

60