IXTP50N20P

Specifications

Tab

Tab

Turn Off Delay Time

70 ns

Typical Turnon Delay Time Ns

26

Continuous Drain Current

50(A)

Drain To Source Breakdown Voltage

200V

Operating Temperature Classification

Military

Maximum Gate Source Voltage V

±20

Gatesource Voltage Max

±20(V)

Avalanche Energy Rating Eas

1000 mJ

Number Of Elements

1

Ppap

No

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Typical Rise Time Ns

35

Uzunluk

10.66mm

Transistor Application

SWITCHING

Turn On Delay Time

26 ns

Pcb Changed

3

Power Dissipation

360W

Terminal Kaplaması

Matte Tin (Sn)

Configuration

Single

Typical Turnoff Delay Time Ns

70

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

120A

Hts

8541.29.00.95

Maximum Continuous Drain Current A

50

Kurşunsuz Kodu

yes

Power Dissipation Max

360W Tc

JESD-609 Kodu

e3

Fet Type

N-Channel

Automotive

No

Operating Temp Range

-55C to 175C

Continuous Drain Current Id

50A

Eccn Us

EAR99

Jedec95 Code

TO-220AB

Package Height

9.15(Max)

Package Length

10.66(Max)

Genişlik

4.83mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active