IXTP48N20T

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Typical Rise Time Ns

26

Power Dissipation

250W

Pcb Changed

3

Configuration

Single

Turn Off Delay Time

46 ns

Tab

Tab

Drain To Source Breakdown Voltage

200V

Typical Turnon Delay Time Ns

20

Avalanche Energy Rating Eas

500 mJ

Maximum Gate Source Voltage V

±30

Ppap

No

Number Of Elements

1

Continuous Drain Current Id

48A

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Package Length

10.66(Max)

Input Capacitance Ciss Max Vds

3000pF @ 25V

Rise Time

26ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Typical Turnoff Delay Time Ns

46

Pulsed Drain Currentmax Idm

130A

Minimum Operating Temperature C

-55

Power Dissipation Max

250W Tc

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

48

Automotive

No

Fet Type

N-Channel

Typical Gate Charge10v Nc

60

Number Of Elements Per Chip

1

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

48A Tc

Kılıf / Paket

TO-220-3