IXTP44P15T

Specifications

Operating Temperature Max

150°C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Typical Rise Time Ns

42

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

150V

Pcb Changed

3

Power Dissipation

298W

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Tab

Tab

Typical Turnon Delay Time Ns

25

Avalanche Energy Rating Eas

1000 mJ

Maximum Gate Source Voltage V

±15

Number Of Elements

1

Ppap

No

Eccn Us

EAR99

Continuous Drain Current Id

44A

REACH Uyumluluk Kodu

not_compliant

Package Length

10.66(Max)

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

13400pF @ 25V

Montaj Tipi

Through Hole

Ambalaj

Tube

Typical Turnoff Delay Time Ns

50

Drain To Source Voltage Vdss

150V

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

130A

Maximum Continuous Drain Current A

44

Hts

8541.29.00.95

JESD-609 Kodu

e3

Power Dissipation Max

298W Tc

Kurşunsuz Kodu

yes

Automotive

No

Fet Type

P-Channel

Number Of Elements Per Chip

1