IXTP44N10T

Specifications

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Jesd30 Code

R-PSFM-T3

Vds Drainsource Breakdown Voltage

100 V

Pin Sayısı

3

Mounting

Through Hole

Id Continuous Drain Current

44 A

Typical Gate Charge10v Nc

27.4

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

ECCN Kodu

EAR99

Montaj

Through Hole

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

44A Tc

Vgs Max

±30V

Maximum Drain Source Voltage V

100

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

30@10V

Typical Gate Charge Vgs Nc

27.4@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

32

Typical Input Capacitance Vds Pf

1567@25V

Terminal Sayısı

3

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

TrenchMV™

Vgsth Max Id

4.5V @ 25μA

Qg Gate Charge

27.4 nC

Maximum Power Dissipation Mw

130000

Additional Feature

AVALANCHE RATED

Supplier Package

TO-220

Drive Voltage Max Rds On Min Rds On

10V

Process Technology

TrenchFET