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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 81 ns
- Drain To Source Breakdown Voltage
- 250V
- Avalanche Energy Rating Eas
- 1000 mJ
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Power Dissipation
- 300W
- Terminal Kaplaması
- Matte Tin (Sn)
- Direnç
- 84MOhm
- Pulsed Drain Currentmax Idm
- 110A
- Power Dissipation Max
- 300W Tc
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 42A
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Input Capacitance Ciss Max Vds
- 2300pF @ 25V
- Rise Time
- 28ns
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2004
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Threshold Voltage
- 5.5V
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Current Continuous Drain Id25
- 42A Tc
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Case Connection
- DRAIN
- Qualification Status
- Not Qualified
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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