IXTP42N15T

Specifications

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

45m Ω @ 500mA, 10V

Gate Charge Qg Max Vgs

21nC @ 10V

Drainsource On Resistancemax

0.045Ohm

Maximum Operating Temperature C

175

Terminal Pozisyonu

SINGLE

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Supplier Package

TO-220

Maximum Power Dissipation Mw

200000

Additional Feature

AVALANCHE RATED

Seri

TrenchHV™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Channel Mode

Enhancement

Channel Type

N

Vgsth Max Id

4.5V @ 250μA

Typical Input Capacitance Vds Pf

1880@25V

Terminal Sayısı

3

Case Connection

DRAIN

Typical Fall Time Ns

25

Maximum Drain Source Resistance Mohm

45@10V

Typical Gate Charge Vgs Nc

21@10V

Qualification Status

Not Qualified

Vgs Max

±30V

Maximum Drain Source Voltage V

150

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Through Hole

ECCN Kodu

EAR99

Current Continuous Drain Id25

42A Tc

Kılıf / Paket

TO-220-3

Typical Gate Charge10v Nc

21

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Through Hole

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Ambalaj

Tube