IXTP3N120

Specifications

Case Connection

DRAIN

Svhc Exceeds Threshold

Yes

Maximum Drain Source Resistance Mohm

4500@10V

Typical Gate Charge Vgs Nc

42@10V

Typical Fall Time Ns

18

Vgs Max

±20V

Maximum Drain Source Voltage V

1200

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Through Hole

ECCN Kodu

EAR99

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

3A Tc

Typical Gate Charge10v Nc

42

Number Of Elements Per Chip

1

Radyasyon Dayanımı

No

Pin Sayısı

3

Mounting

Through Hole

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Threshold Voltage

5V

Eu Rohs

Compliant with Exemption

Yayın Yılı

2004

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

18 ns

Rds On Max Id Vgs

4.5 Ω @ 500mA, 10V

Gate Charge Qg Max Vgs

42nC @ 10V

Maximum Operating Temperature C

150

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Supplier Package

TO-220

Maximum Power Dissipation Mw

200000

Additional Feature

AVALANCHE RATED

Channel Type

N

Channel Mode

Enhancement

Seri

HiPerFET™