IXTP36P15P

Specifications

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

110m Ω @ 18A, 10V

Fall Time Typ

15 ns

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

55nC @ 10V

Vgsth Max Id

4.5V @ 250μA

Maximum Gate Source Leakage Current Na

100

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarP™

Channel Type

P

Channel Mode

Enhancement

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

3100@25V

Supplier Package

TO-220

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

300000

Maximum Gate Threshold Voltage V

4.5

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

36A Tc

Montaj

Through Hole

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

55

Typical Fall Time Ns

15

Typical Gate Charge Vgs Nc

55@10V

Maximum Drain Source Resistance Mohm

110@10V

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

150

Vgs Max

±20V

Jesd30 Code

R-PSFM-T3

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Eu Rohs

Compliant with Exemption