IXTP32P05T

Specifications

Typical Rise Time Ns

28

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

50V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

PURE TIN

Configuration

SINGLE WITH BUILT-IN DIODE

Pcb Changed

3

Power Dissipation

83W

Typical Turnon Delay Time Ns

20

Tab

Tab

Number Of Elements

1

Ppap

No

Avalanche Energy Rating Eas

200 mJ

Maximum Gate Source Voltage V

±15

Package Length

10.66(Max)

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Eccn Us

EAR99

Continuous Drain Current Id

32A

REACH Uyumluluk Kodu

unknown

Montaj Tipi

Through Hole

Ambalaj

Tube

Input Capacitance Ciss Max Vds

1975pF @ 25V

Drain To Source Voltage Vdss

50V

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

110A

Typical Turnoff Delay Time Ns

39

Automotive

No

Fet Type

P-Channel

Maximum Continuous Drain Current A

32

Hts

8541.29.00.95

JESD-609 Kodu

e3

Power Dissipation Max

83W Tc

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

32A Tc