IXTP260N055T2

Specifications

Pcb Changed

3

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

55V

Typical Rise Time Ns

27

Avalanche Energy Rating Eas

600 mJ

Ppap

Unknown

Number Of Elements

1

Tab

Tab

Typical Turnon Delay Time Ns

20

Input Capacitance Ciss Max Vds

10800pF @ 25V

Ambalaj

Tube

Montaj Tipi

Through Hole

Eccn Us

EAR99

Continuous Drain Current Id

260A

Parça Durumu

Active

Package Width

4.7(Max)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Package Height

9.1(Max)

Package Length

10.3(Max)

Power Dissipation Max

480W Tc

JESD-609 Kodu

e1

Maximum Idss Ua

5

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

260

Automotive

Unknown

Fet Type

N-Channel

Typical Turnoff Delay Time Ns

36

Pulsed Drain Currentmax Idm

780A

Drain To Source Voltage Vdss

55V

Minimum Operating Temperature C

-55

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Maximum Drain Source Voltage V

55

Case Connection

DRAIN

Typical Fall Time Ns

24