IXTP24N65X2

Specifications

Category

Power MOSFET

Eu Rohs

Compliant

Mounting

Through Hole

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

650 V

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

24A Tc

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Id Continuous Drain Current

24 A

Typical Gate Charge10v Nc

36

Typical Gate Charge Vgs Nc

36@10V

Maximum Drain Source Resistance Mohm

145@10V

Typical Fall Time Ns

19

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

650

Vgs Max

±30V

Vgsth Max Id

5V @ 250μA

Channel Mode

Enhancement

Technology

Si

Channel Type

N

Typical Input Capacitance Vds Pf

2060@25V

Supplier Package

TO-220AB

Maximum Power Dissipation Mw

390000

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

145m Ω @ 12A, 10V

Pd Power Dissipation

390 W

Fabrika Tedarik Süresi

15 Weeks

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

36nC @ 10V

Typical Turnon Delay Time Ns

20

Tab

Tab

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Ppap

No

Maximum Gate Source Voltage V

±30

Typical Rise Time Ns

25

Configuration

Single

Rds On Drainsource Resistance

145 mOhms

Pcb Changed

3