Volume pricing
- 1+ pcs$5.89
- 10+ pcs$5.56
- 100+ pcs$5.24
- 500+ pcs$4.95
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 4.2m Ω @ 50A, 10V
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 24 Weeks
- Drainsource On Resistancemax
- 0.0042Ohm
- Maximum Operating Temperature C
- 175
- Gate Charge Qg Max Vgs
- 178nC @ 10V
- Terminal Pozisyonu
- SINGLE
- Drive Voltage Max Rds On Min Rds On
- 10V
- Supplier Package
- TO-220
- Additional Feature
- AVALANCHE RATED
- Maximum Power Dissipation Mw
- 480000
- Vgsth Max Id
- 4V @ 250μA
- Channel Mode
- Enhancement
- Channel Type
- N
- Seri
- TrenchT2™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Typical Input Capacitance Vds Pf
- 10500@25V
- Maximum Drain Source Resistance Mohm
- 4.2@10V
- Typical Gate Charge Vgs Nc
- 178@10V
- Qualification Status
- Not Qualified
- Typical Fall Time Ns
- 15
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Maximum Drain Source Voltage V
- 75
- Vgs Max
- ±20V
- Current Continuous Drain Id25
- 230A Tc
- Kılıf / Paket
- TO-220-3
- Montaj
- Through Hole
- ECCN Kodu
- EAR99
- Number Of Elements Per Chip
- 1
- Typical Gate Charge10v Nc
- 178
- Mounting
- Through Hole
- Pin Sayısı
- 3
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- ROHS3 Compliant
- Category
- Power MOSFET
- Eu Rohs
- Compliant with Exemption
- Yayın Yılı
- 2008
- Montaj Tipi
- Through Hole
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