IXTP200N055T2

Specifications

Pulsed Drain Currentmax Idm

500A

Vgs Th Gatesource Threshold Voltage

2 V

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

49

Maks. Çalışma Sıcaklığı

+ 175 C

Automotive

Unknown

Fet Type

N-Channel

Power Dissipation Max

360W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

200

Hts

8541.29.00.95

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Length

10.66(Max)

Package Height

9.15(Max)

Jedec95 Code

TO-220AB

Continuous Drain Current Id

200A

REACH Uyumluluk Kodu

unknown

Transistor Polarity

N-Channel

Rise Time

22ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

6800pF @ 25V

Drain To Source Breakdown Voltage

55V

Typical Turnon Delay Time Ns

26

Minimum Operating Temperature

- 55 C

Turn Off Delay Time

49 ns

Tab

Tab

Ppap

Unknown

Montaj Stili

Through Hole

Number Of Elements

1

Avalanche Energy Rating Eas

600 mJ

Maximum Gate Source Voltage V

±20

Transistor Application

SWITCHING

Typical Rise Time Ns

22

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

Single