IXTP1R6N50D2

Specifications

Input Capacitance Ciss Max Vds

645pF @ 25V

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

70ns

Transistor Polarity

N-Channel

REACH Uyumluluk Kodu

unknown

Continuous Drain Current Id

1.6A

Jedec95 Code

TO-220AB

Package Height

9.15(Max)

Package Length

10.66(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Width

4.83(Max)

Parça Durumu

Active

Hts

8541.29.00.95

Maximum Continuous Drain Current A

1.6(Min)

Kurşunsuz Kodu

yes

Power Dissipation Max

100W Tc

Fet Type

N-Channel

Automotive

No

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnoff Delay Time Ns

35

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4.5 V

Pcb Changed

3

Rds On Drainsource Resistance

2.3 Ohms

Power Dissipation

100W

Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Typical Rise Time Ns

70

Transistor Application

AMPLIFIER

Maximum Gate Source Voltage V

±20

Number Of Elements

1

Montaj Stili

Through Hole

Ppap

No

Tab

Tab

Minimum Operating Temperature

- 55 C

Turn Off Delay Time

35 ns

Typical Turnon Delay Time Ns

25

Drain To Source Breakdown Voltage

500V