IXTP1N120P

Specifications

Drain Currentmax Abs Id

1A

Vgsth Max Id

4.5V @ 50μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarVHV™

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

445@25V

Supplier Package

TO-220AB

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

63000

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Fall Time Typ

27 ns

Rds On Max Id Vgs

20 Ω @ 500mA, 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

17.6nC @ 10V

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2007

Eu Rohs

Compliant

Mounting

Through Hole

Pin Sayısı

3

Current Continuous Drain Id25

1A Tc

Kılıf / Paket

TO-220-3

Montaj

Through Hole

ECCN Kodu

EAR99

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

17.6

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

17.6@10V

Maximum Drain Source Resistance Mohm

20000@10V

Typical Fall Time Ns

27

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ