IXTP16N50P

Specifications

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

400@10V

Typical Gate Charge Vgs Nc

43@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

22

Vgs Max

±30V

Maximum Drain Source Voltage V

500

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Through Hole

ECCN Kodu

EAR99

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

16A Tc

Typical Gate Charge10v Nc

43

Number Of Elements Per Chip

1

Pin Sayısı

3

Mounting

Through Hole

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Category

Power MOSFET

Threshold Voltage

5.5V

Yayın Yılı

2004

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Gate To Source Voltage Vgs

30V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

25 ns

Rds On Max Id Vgs

400m Ω @ 8A, 10V

Process Technology

PolarHT

Gate Charge Qg Max Vgs

43nC @ 10V

Maximum Operating Temperature C

150

Drainsource On Resistancemax

0.4Ohm

Reach Svhc

No SVHC

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Supplier Package

TO-220

Maximum Power Dissipation Mw

300000

Additional Feature

AVALANCHE RATED

Channel Type

N

Channel Mode

Enhancement