IXTP15N50L2

Specifications

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-220AB

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

15A

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Rds On Max Id Vgs

480m Ω @ 7.5A, 10V

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

4080pF @ 25V

Gate Charge Qg Max Vgs

123nC @ 10V

Reach Svhc

No SVHC

Drainsource On Resistancemax

0.48Ohm

Seri

Linear L2™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

500V

Vgsth Max Id

4.5V @ 250μA

Terminal Sayısı

3

Fet Type

N-Channel

Power Dissipation Max

300W Tc

JESD-609 Kodu

e1

Kurşunsuz Kodu

yes

Nominal Vgs

2.5 V

Additional Feature

AVALANCHE RATED

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Through Hole

Ds Breakdown Voltagemin

500V

Current Continuous Drain Id25

15A Tc

Kılıf / Paket

TO-220-3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Qualification Status

Not Qualified

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs Max

±20V

Power Dissipation

300W