IXTP14N60P

Specifications

Vgsth Max Id

5.5V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarHV™

Channel Type

N

Channel Mode

Enhancement

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

2300@25V

Supplier Package

TO-220

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

300000

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

550m Ω @ 7A, 10V

Fall Time Typ

26 ns

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks

Drainsource On Resistancemax

0.55Ohm

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

36nC @ 10V

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2006

Mounting

Through Hole

Pin Sayısı

3

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

14A Tc

Montaj

Through Hole

Number Of Elements Per Chip

1

Polaritychannel Type

P-CHANNEL

Typical Gate Charge10v Nc

36

Typical Fall Time Ns

26

Maximum Drain Source Resistance Mohm

550@10V

Typical Gate Charge Vgs Nc

36@10V

Qualification Status

Not Qualified

Case Connection

DRAIN

Maximum Drain Source Voltage V

600