IXTP120P065T

Specifications

Drain To Source Breakdown Voltage

-65V

Typical Turnon Delay Time Ns

31

Turn Off Delay Time

38 ns

Tab

Tab

Ppap

No

Number Of Elements

1

Avalanche Energy Rating Eas

1000 mJ

Maximum Gate Source Voltage V

±15

Transistor Application

SWITCHING

Typical Rise Time Ns

28

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

Single

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation

298W

Pcb Changed

3

Drain To Source Voltage Vdss

65V

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

38

Automotive

No

Fet Type

P-Channel

Power Dissipation Max

298W Tc

JESD-609 Kodu

e1

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

120

Package Width

4.83(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-220AB

Package Height

9.15(Max)

Package Length

10.66(Max)

Continuous Drain Current Id

120A

Rise Time

28ns

Ambalaj

Tube

Montaj Tipi

Through Hole

Svhc

Yes

Input Capacitance Ciss Max Vds

13200pF @ 25V

Element Configuration

Single

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant