IXTP120N04T2

Specifications

Gate To Source Voltage Vgs

20V

Eu Rohs

Compliant with Exemption

Yayın Yılı

2008

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Mounting

Through Hole

Pin Sayısı

3

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

58

Current Continuous Drain Id25

120A Tc

Kılıf / Paket

TO-220-3

ECCN Kodu

EAR99

Montaj

Through Hole

Maximum Drain Source Voltage V

40

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Maximum Drain Source Resistance Mohm

6.1@10V

Typical Gate Charge Vgs Nc

58@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

11

Case Connection

DRAIN

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

3240@25V

Vgsth Max Id

4V @ 250μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

TrenchT2™

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

200000

Supplier Package

TO-220

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.0061Ohm

Maximum Operating Temperature C

175

Gate Charge Qg Max Vgs

58nC @ 10V

Process Technology

TrenchT2

Fall Time Typ

11 ns